publication date : may., 2011 1 < high-power gan hemt (small signal gain stage) > MGF0840G l to c band / 10w non - matched description the MGF0840G, gan hemt with an n-channel schottky gate, is designed for mmds/umts/wimax applications. features ? high voltage operation vds=47v ? high output power po=40.5dbm(typ.) @f=2.6ghz,p3db ? high efficiency ? d=60%(typ.) @f=2.6ghz,p3db ? designed for use in class ab linear amplifiers application ? mmds/umts/wimax quality ? gg packaging ? 4 inch tray (25 pcs) recommended bias conditions ? vds=47v ? ids=90ma ? rg=120 ? absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit v ds drain to source voltage 120 v v gs gate to source voltage -10 v i gr reverse gate current -1.5 ma i gf forward gate current 30 ma p t*1 total power dissipation 21 w tch cannel temperature 230 ? c tstg storage temperature -65 to +175 ? c *1:tc=25 ? c electrical characteristics (ta=25 ? c) symbol parameter test conditions limits unit min. typ. max. vgs(off) gate to source cut-off voltage vds=47v,id=3ma -1 - -5 v p3db 3db gain compression power 39.5 40.5 - dbm ? d drain efficiency - 60 - % glp *2 linear power gain vds=47v,id(rf off)=90ma f=2.6ghz *2 : pin=20dbm 14 15 - db rth(ch-c) *3 thermal resistance vf method - 6.8 9.8 ? c/w *3 :channel-case specification are subject to change without notice. note dc aging is recommended to perform before operating in order to stabilize a characteristics of gan-hemt. (ta R 80 ? c) ? bias conditions vds=47v , ids=90ma ? time 10hrs (1) gate (2) source (flange) (3) drain 0 . 6 5 gf-7 1 . 6 5 0 . 1 14.0 9.00.2 5.0 1 . 9 0 . 4 out li ne drawi ng 2.2 0.60.2 unit : millimeters 2 m i n 4 . 4 + 0 / - 0 . 3 2 m i n preliminary
< high-power gan hemt (small signal gain stage) > MGF0840G l to c band / 10w non - matched publication date : may., 2011 2 preliminar y MGF0840G example of circuit schemati c and charactreistics : f = 2.6 ghz 0.0 0.2 0.4 5 101520253035 pin(dbm) idrf(a) 0 5 10 15 20 25 30 35 40 45 50 po(dbm),gp(db) 0 10 20 30 40 50 60 70 80 90 100 efficiency(%) f=2.6ghz vd=47v idq=90ma ta=25deg. po effi gp
< high-power gan hemt (small signal gain stage) > MGF0840G l to c band / 10w non - matched publication date : may., 2011 3 preliminar y MGF0840G s-parameters ( ta=25deg.c , vds=47(v),ids=90(ma) ) s parameters(typ.) s11 s21 s12 s22 f (ghz) magn. angle(deg.) magn. angle(deg.) m agn. angle(deg.) magn. angle(deg.) 0.6 0.884 -114.8 11.163 107.9 0.068 -6.7 0.446 -102.7 1.0 0.803 -144.0 7.081 88.7 0.058 0.3 0.389 -120.9 1.4 0.808 -158.2 5.344 76.2 0.056 4.0 0.356 -129.0 1.8 0.792 -169.5 4.327 66.7 0.065 -1.3 0.379 -130.1 2.2 0.773 -178.2 3.730 56.7 0.059 -10.8 0.389 -137.9 2.6 0.777 172.1 3.184 45.1 0.062 -18.1 0.407 -143.8 3.0 0.730 162.4 2.945 36.9 0.057 -22.6 0.379 -144.0 3.4 0.761 153.0 2.767 26.9 0.064 -22.3 0.374 -148.9 3.8 0.753 141.7 2.505 15.1 0.067 -26.5 0.394 -156.2 4.2 0.777 133.4 2.335 5.9 0.063 -39.3 0.400 -165.8 4.6 0.781 123.8 2.191 -3.2 0.063 -42.4 0.402 -172.7 5.0 0.760 116.5 2.107 -11.7 0.060 -40.3 0.418 -178.9 5.4 0.745 105.0 2.040 -22.2 0.058 -41.0 0.444 175.9 5.8 0.723 93.4 1.985 -33.3 0.060 -41.7 0.476 170.6 6.2 0.719 77.3 1.906 -44.6 0.059 -50.0 0.495 165.8 6.6 0.733 61.2 1.819 -56.3 0.060 -49.6 0.495 161.0 7.0 0.772 44.8 1.713 -68.7 0.056 -53.2 0.478 154.9 7.4 0.801 32.9 1.613 -79.1 0.058 -52.6 0.450 147.0 7.8 0.826 23.4 1.546 -89.0 0.057 -52.6 0.430 137.0 8.2 0.853 13.9 1.513 -99.1 0.061 -48.6 0.420 125.8
< high-power gan hemt (small signal gain stage) > MGF0840G l to c band / 10w non - matched publication date : may., 2011 4 preliminar y ? 2011 mitsubishi electric corporation. all rights reserved. keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party?s rights, originating in the use of any pr oduct data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in thes e materials, including product data, diagrams, charts, programs and algorithms represents information on pr oducts at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pu rchasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no re sponsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to info rmation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (http://www. m itsubishi e lectric.com/). ?when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, pleas e be sure to evaluate all informati on as a total system before making a final decision on the applic ability of the information and products. mi tsubishi electric corporation assumes no responsibility for any damage, liabilit y or other loss resulting from the information contained herein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circum stances in which human life is pot entially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distributor when considering the use of a pr oduct contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be im ported into a country other than the approved destination. any diversion or re-export contrary to the export contro l laws and regulations of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubi shi semiconductor product distributor for further details on these material s or the products contained therein.
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